2EDL6014ACG2DXTMA1 vs 2EDL900G3XTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL6014ACG2DXTMA1 sa pamamagitan ng Infineon at 2EDL900G3XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 2EDL6014ACG2DXTMA1 2EDL900G3XTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Output Kumpigurasyon Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Temperature na Operasyon -40 C to +125 C —
Packhaging 11-WQFN (2.2 x 2.2 mm) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction isolation (JI), 120 V
Uri ng Pagpapasok Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Hanay ng Temperature na Operasyon — -40 C to +125 C
Level ng MSL — 1
Tindminan RoHS — Compliant

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