2EDL6014ACG2DXTMA1 vs 2EDL900G3XTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL6014ACG2DXTMA1 dari Infineon dan 2EDL900G3XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL6014ACG2DXTMA1 2EDL900G3XTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Konfigurasi Output Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Suhu Kerja -40 C to +125 C —
Paket 11-WQFN (2.2 x 2.2 mm) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction isolation (JI), 120 V
Tipe Mounting Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Rentang Suhu Kerja — -40 C to +125 C
Level MSL — 1
Status RoHS — Compliant

Spek dan Sumber

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