2EDL6014ACG2DXTMA1 vs 2EDL900G3XTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL6014ACG2DXTMA1 disebabkan oleh Infineon dan 2EDL900G3XTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL6014ACG2DXTMA1 2EDL900G3XTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Konfigurasi Output Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Suhu Operasi -40 C to +125 C —
Kemasan 11-WQFN (2.2 x 2.2 mm) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction isolation (JI), 120 V
Jenis Pemasangan Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Gambaran Suhu Operasi — -40 C to +125 C
Aras MSL — 1
Status RoHS — Compliant

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