2EDN8533RXTMA1 vs 2EDL6014ACG2DXTMA1 Comparison

Detailed side-by-side comparison of 2EDN8533RXTMA1 by Infineon and 2EDL6014ACG2DXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDN8533RXTMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Dual-channel low-side gate driver IC —
Driver Configuration Low-side, dual independent channels —
Peak Source/Sink Current 5 A per channel —
Number of Channels 2 2 (high-side + low-side)
Input Compatibility LV-TTL —
Input Voltage Tolerance (absolute max) -12 V to +22 V —
Supply Voltage (VCC) [DATA_NEEDED: VCC operating range] —
Output Resistance Low (per datasheet; see SG figure) —
Propagation Delay Matched between channels (excellent timing accuracy) —
Under-Voltage Lockout (UVLO) Yes (VCC UVLO) —
Package PG-TSSOP-8 (exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: operating temperature] —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant (per Infineon product page) —
Driver Type — Half-Bridge Gate Driver
Output Configuration — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Operating Temperature — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

Datasheets & Resources

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