2EDN8533RXTMA1 vs 2EDL6014ACG2DXTMA1 对比

详细并排对比 2EDN8533RXTMA1 出自 Infineon 和 2EDL6014ACG2DXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDN8533RXTMA1 2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 ✓ 量产中

规格对比

参数 2EDN8533RXTMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.18
Product Type Dual-channel low-side gate driver IC —
Driver Configuration Low-side, dual independent channels —
Peak Source/Sink Current 5 A per channel —
Number of Channels 2 2 (high-side + low-side)
Input Compatibility LV-TTL —
Input Voltage Tolerance (absolute max) -12 V to +22 V —
Supply Voltage (VCC) [DATA_NEEDED: VCC operating range] —
Output Resistance Low (per datasheet; see SG figure) —
Propagation Delay Matched between channels (excellent timing accuracy) —
Under-Voltage Lockout (UVLO) Yes (VCC UVLO) —
封装 PG-TSSOP-8 (exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature] —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant (per Infineon product page) —
Driver Type — Half-Bridge Gate Driver
输出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作温度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

数据手册与资源

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