2EDN8533RXTMA1 vs 2EDL6014ACG2DXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDN8533RXTMA1 von Infineon und 2EDL6014ACG2DXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDN8533RXTMA1 2EDL6014ACG2DXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $1,18
Product Type Dual-channel low-side gate driver IC —
Driver Configuration Low-side, dual independent channels —
Peak Source/Sink Current 5 A per channel —
Number of Channels 2 2 (high-side + low-side)
Input Compatibility LV-TTL —
Input Voltage Tolerance (absolute max) -12 V to +22 V —
Supply Voltage (VCC) [DATA_NEEDED: VCC operating range] —
Output Resistance Low (per datasheet; see SG figure) —
Propagation Delay Matched between channels (excellent timing accuracy) —
Under-Voltage Lockout (UVLO) Yes (VCC UVLO) —
Gehäuse PG-TSSOP-8 (exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temperature] —
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant (per Infineon product page) —
Driver Type — Half-Bridge Gate Driver
Ausgangskonfiguration — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Betriebstemperatur — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

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