2N7002H6327XTSA2 vs BSS123NH6327XTSA1 Comparison

Detailed side-by-side comparison of 2N7002H6327XTSA2 by Infineon and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 βœ“ Active
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter 2N7002H6327XTSA2 BSS123NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.09
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS (Planar) β€”
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 300 mA (Ta) 190 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical and max VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg total] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Operating Temperature Range -55C to +150C (Tj) -55 Β°C to +150 Β°C (junction)
Package PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Channel Mode Enhancement β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Qualification Industrial / Commercial Grade AEC-Q101 (automotive)
Manufacturer β€” Infineon Technologies
Part Number β€” BSS123NH6327XTSA1
Part Status β€” Active
FET Type β€” N-Channel, Enhancement Mode
RDS(on) Max β€” 6 Ξ© @ VGS = 10 V
Gate-Source Voltage Max (VGS) β€” Β±20 V
RoHS Compliance β€” Yes (Pb-free lead plating)

Datasheets & Resources

Browse All Products Create BOM Request Quote