2N7002H6327XTSA2 vs BSS123NH6327XTSA1 比較

詳細並排比較 2N7002H6327XTSA2 由 Infineon 與 BSS123NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 ✓ 啟用中
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 啟用中

規格比較

參數 2N7002H6327XTSA2 BSS123NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology OptiMOS (Planar) —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 300 mA (Ta) 190 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical and max VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
工作溫度範圍 -55C to +150C (Tj) -55 °C to +150 °C (junction)
封裝 PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
Channel Mode Enhancement —
MSL 等級 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Lead-Free Yes —
Qualification Industrial / Commercial Grade AEC-Q101 (automotive)
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
RoHS Compliance — Yes (Pb-free lead plating)

資料表與資源

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