2N7002H6327XTSA2 vs BSS123NH6327XTSA1 对比

详细并排对比 2N7002H6327XTSA2 出自 Infineon 和 BSS123NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 ✓ 量产中
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 量产中

规格对比

参数 2N7002H6327XTSA2 BSS123NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.08 $0.09
晶体管类型 N-Channel MOSFET —
Technology OptiMOS (Planar) —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 300 mA (Ta) 190 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical and max VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
工作温度范围 -55C to +150C (Tj) -55 °C to +150 °C (junction)
封装 PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
Channel Mode Enhancement —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant —
Lead-Free Yes —
Qualification Industrial / Commercial Grade AEC-Q101 (automotive)
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
RoHS Compliance — Yes (Pb-free lead plating)

数据手册与资源

浏览全部产品 创建 BOM 获取报价