6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 Comparison
Detailed side-by-side comparison of 6EDL04I065PRXUMA1 by Infineon and 6EDL04N02PRXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
6EDL04I065PRXUMA1
6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon
6EDL04I065PRXUMA1 β Active
Specification Comparison
| Parameter | 6EDL04I065PRXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $2.32 |
| Product Type | Three-Phase Gate Driver IC | 3-Phase Gate Driver IC |
| Topology | Half-Bridge, 3-phase (6 outputs) | β |
| Blocking Voltage | 650 V | β |
| Output Configuration | 6 outputs (3 high-side + 3 low-side) | β |
| Logic Inputs | Non-Inverting | β |
| Source Current (typ.) | 0.24 A | 0.375 A |
| Sink Current (typ.) | 0.5 A | 0.75 A |
| Logic Supply Voltage (VCC) | 3.3 V to 5 V (typ. 5 V) | β |
| High-Side Floating Supply Voltage (VB) | up to 650 V (offset) | β |
| Bootstrap Diodes | Integrated (3x) | β |
| Over-Current Protection (OCP) | Yes | β |
| Under-Voltage Lockout (UVLO) | Yes (per channel) | β |
| Fault Output | Yes (open-drain / active-low) | β |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay] | β |
| Operating Junction Temperature | -40 C to +125 C | β |
| Package | PG-TSSOP-25 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 2 (per JEDEC J-STD-020) | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS Status | Compliant | Compliant |
| Driver Configuration | β | Half-bridge (3 high-side + 3 low-side) |
| Maximum Blocking Voltage | β | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | β | 200 V class (operating range 10 V to 20 V on VCC) |
| Bootstrap Diode | β | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | β | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | β | Yes (active-high) |
| Fault Output (nFAULT) | β | Yes (active-low, open-drain) |
| Input Logic Compatibility | β | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | β | Yes (built-in per phase pair) |
| Process Technology | β | Thin-film SOI (Silicon-On-Insulator) |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Maximum Junction Temperature | β | +150 Β°C |
| Target Switches | β | MOSFETs up to 180 V, IGBTs up to 180 V |