6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 Vergleich

Detaillierter Direktvergleich von 6EDL04I065PRXUMA1 von Infineon und 6EDL04N02PRXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ Aktiv
Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter 6EDL04I065PRXUMA1 6EDL04N02PRXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,65 $2,32
Product Type Three-Phase Gate Driver IC 3-Phase Gate Driver IC
Topologie Half-Bridge, 3-phase (6 outputs) —
Blocking Voltage 650 V —
Ausgangskonfiguration 6 outputs (3 high-side + 3 low-side) —
Logic Inputs Non-Inverting —
Source Current (typ.) 0.24 A 0.375 A
Sink Current (typ.) 0.5 A 0.75 A
Logic Supply Voltage (VCC) 3.3 V to 5 V (typ. 5 V) —
High-Side Floating Supply Voltage (VB) up to 650 V (offset) —
Bootstrap Diodes Integrated (3x) —
Over-Current Protection (OCP) Yes —
Under-Voltage Lockout (UVLO) Yes (per channel) —
Fault Output Yes (open-drain / active-low) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] —
Betriebs-Sperrschichttemperatur -40 C to +125 C —
Gehäuse PG-TSSOP-25 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Montageart Surface Mount Surface Mount
MSL-Level 2 (per JEDEC J-STD-020) MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS-Status Compliant Compliant
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Betriebstemperaturbereich — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

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