6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 Comparação

Comparação detalhada lado a lado de 6EDL04I065PRXUMA1 por Infineon e 6EDL04N02PRXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ Ativo
Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Ativo

Comparação de especificações

Parâmetro 6EDL04I065PRXUMA1 6EDL04N02PRXUMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $2,65 $2,32
Product Type Three-Phase Gate Driver IC 3-Phase Gate Driver IC
Topologia Half-Bridge, 3-phase (6 outputs) —
Blocking Voltage 650 V —
Configuração de saída 6 outputs (3 high-side + 3 low-side) —
Logic Inputs Non-Inverting —
Source Current (typ.) 0.24 A 0.375 A
Sink Current (typ.) 0.5 A 0.75 A
Logic Supply Voltage (VCC) 3.3 V to 5 V (typ. 5 V) —
High-Side Floating Supply Voltage (VB) up to 650 V (offset) —
Bootstrap Diodes Integrated (3x) —
Over-Current Protection (OCP) Yes —
Under-Voltage Lockout (UVLO) Yes (per channel) —
Fault Output Yes (open-drain / active-low) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] —
Temperatura de junção de operação -40 C to +125 C —
Encapsulamento PG-TSSOP-25 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Tipo de montagem Surface Mount Surface Mount
Nível MSL 2 (per JEDEC J-STD-020) MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
Status RoHS Compliant Compliant
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Faixa de temperatura de operação — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

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