6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 비교
다음의 상세 나란히 비교: 6EDL04I065PRXUMA1 제조: Infineon 및 6EDL04N02PRXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 6EDL04I065PRXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.65 | $2.32 |
| Product Type | Three-Phase Gate Driver IC | 3-Phase Gate Driver IC |
| 토폴로지 | Half-Bridge, 3-phase (6 outputs) | — |
| Blocking Voltage | 650 V | — |
| 출력 구성 | 6 outputs (3 high-side + 3 low-side) | — |
| Logic Inputs | Non-Inverting | — |
| Source Current (typ.) | 0.24 A | 0.375 A |
| Sink Current (typ.) | 0.5 A | 0.75 A |
| Logic Supply Voltage (VCC) | 3.3 V to 5 V (typ. 5 V) | — |
| High-Side Floating Supply Voltage (VB) | up to 650 V (offset) | — |
| Bootstrap Diodes | Integrated (3x) | — |
| Over-Current Protection (OCP) | Yes | — |
| Under-Voltage Lockout (UVLO) | Yes (per channel) | — |
| Fault Output | Yes (open-drain / active-low) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay] | — |
| 동작 접합 온도 | -40 C to +125 C | — |
| 패키지 | PG-TSSOP-25 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 2 (per JEDEC J-STD-020) | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS 상태 | Compliant | Compliant |
| Driver Configuration | — | Half-bridge (3 high-side + 3 low-side) |
| Maximum Blocking Voltage | — | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Bootstrap Diode | — | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Input Logic Compatibility | — | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| 동작 온도 범위 | — | -40 °C to +125 °C |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |