6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 比較
詳細な並列比較: 6EDL04I065PRXUMA1 メーカー: Infineon および 6EDL04N02PRXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 6EDL04I065PRXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.65 | $2.32 |
| Product Type | Three-Phase Gate Driver IC | 3-Phase Gate Driver IC |
| トポロジー | Half-Bridge, 3-phase (6 outputs) | — |
| Blocking Voltage | 650 V | — |
| 出力構成 | 6 outputs (3 high-side + 3 low-side) | — |
| Logic Inputs | Non-Inverting | — |
| Source Current (typ.) | 0.24 A | 0.375 A |
| Sink Current (typ.) | 0.5 A | 0.75 A |
| Logic Supply Voltage (VCC) | 3.3 V to 5 V (typ. 5 V) | — |
| High-Side Floating Supply Voltage (VB) | up to 650 V (offset) | — |
| Bootstrap Diodes | Integrated (3x) | — |
| Over-Current Protection (OCP) | Yes | — |
| Under-Voltage Lockout (UVLO) | Yes (per channel) | — |
| Fault Output | Yes (open-drain / active-low) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay] | — |
| 動作接合温度 | -40 C to +125 C | — |
| パッケージ | PG-TSSOP-25 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 2 (per JEDEC J-STD-020) | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS ステータス | Compliant | Compliant |
| Driver Configuration | — | Half-bridge (3 high-side + 3 low-side) |
| Maximum Blocking Voltage | — | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Bootstrap Diode | — | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Input Logic Compatibility | — | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| 動作温度範囲 | — | -40 °C to +125 °C |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |