6EDL04I065PRXUMA1 vs 6EDL04N02PRXUMA1 Comparación

Comparación detallada lado a lado de 6EDL04I065PRXUMA1 por Infineon y 6EDL04N02PRXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ Activo
Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Activo

Comparación de especificaciones

Parámetro 6EDL04I065PRXUMA1 6EDL04N02PRXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $2,65 $2,32
Product Type Three-Phase Gate Driver IC 3-Phase Gate Driver IC
Topología Half-Bridge, 3-phase (6 outputs) —
Blocking Voltage 650 V —
Configuración de salida 6 outputs (3 high-side + 3 low-side) —
Logic Inputs Non-Inverting —
Source Current (typ.) 0.24 A 0.375 A
Sink Current (typ.) 0.5 A 0.75 A
Logic Supply Voltage (VCC) 3.3 V to 5 V (typ. 5 V) —
High-Side Floating Supply Voltage (VB) up to 650 V (offset) —
Bootstrap Diodes Integrated (3x) —
Over-Current Protection (OCP) Yes —
Under-Voltage Lockout (UVLO) Yes (per channel) —
Fault Output Yes (open-drain / active-low) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] —
Temperatura de unión de funcionamiento -40 C to +125 C —
Encapsulado PG-TSSOP-25 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Tipo de montaje Surface Mount Surface Mount
Nivel MSL 2 (per JEDEC J-STD-020) MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
Estado RoHS Compliant Compliant
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Rango de temperatura de funcionamiento — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

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