AS4C512M16D4-75BIN vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of AS4C512M16D4-75BIN by Alliance Memory and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ Active
Specification Comparison
| Parameter | AS4C512M16D4-75BIN | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Alliance Memory | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x16 |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Supply Voltage | 1.2 V | — |
| Package | 96-FBGA (7.5x13) | FBGA-96 (13x7.5 mm) |
| Operating Temperature | -40°C to +95°C | — |
| Mounting Type | Surface Mount | — |
| Interface | POD | — |
| Data Rate | 2666 Mbps | 3200 Mbps |
| Number of Pins | 96 | — |
| RoHS Status | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |