AS4C512M16D4-75BIN vs H5AN8G6NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4-75BIN disebabkan oleh Alliance Memory dan H5AN8G6NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ Aktif
Pengandingan Spesifikasi
| Parametr | AS4C512M16D4-75BIN | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | Alliance Memory | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $55.68 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x16 |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 96-FBGA (7.5x13) | FBGA-96 (13x7.5 mm) |
| Suhu Operasi | -40°C to +95°C | — |
| Jenis Pemasangan | Surface Mount | — |
| Antaramuka | POD | — |
| Kadar Data | 2666 Mbps | 3200 Mbps |
| Bilangan Pin | 96 | — |
| Status RoHS | Compliant | — |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |