AS4C512M16D4B-62BCNTR vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of AS4C512M16D4B-62BCNTR by Alliance Memory and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4B-62BCNTR AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR ✓ Active
Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active

Specification Comparison

Parameter AS4C512M16D4B-62BCNTR MT40A512M16TB-062E:R
Brand Alliance Memory Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit (512M x 16)
Data Rate 3200 MT/s 3200 MT/s
Clock Frequency 1600 MHz 1600 MHz
CAS Latency 19 ns 22
Supply Voltage 1.2 V (1.14V to 1.26V) —
Interface Parallel Parallel
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13 mm)
Operating Temperature 0°C to 95°C 0°C to +95°C
Mounting Type Surface Mount —
JEDEC Standard Compliant —
Organization 512M x 16 —
Revision Rev.B —
RoHS Status Compliant Compliant
Lead-Free Yes —
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Voltage — 2.5V (-125mV, +250mV)
Data Bus Width — 16 bits
Refresh Time — 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C)
I/O Type — 1.2V pseudo open-drain
Features — Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration

Datasheets & Resources

Browse All Products Create BOM Request Quote