BSC010NE2LSIATMA1 vs BSZ011NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSZ011NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC010NE2LSIATMA1 BSZ011NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series / Family OptiMOS 25V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Kemasan PG-TDSON-8-7 (TDSON-8 EP) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 (Trench)
Gambaran Suhu Operasi -55C to +150C (TJ) -55°C to +150°C
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Aras MSL [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 35 A
Continuous Drain Current (ID) at TC=25°C — 40 A
On-State Resistance RDS(on) max at VGS=10 V — 1.1 mΩ (typical, per datasheet title)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 69 W
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) — 4.5 V to 10 V
Lead-Free — Yes
Boson Bebas — Yes

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