BSC019N04LSTATMA1 vs BSG0813NDIATMA1 比較
詳細並排比較 BSC019N04LSTATMA1 由 Infineon 與 BSG0813NDIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC019N04LSTATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | — |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| 工作溫度範圍 | -55 C to +150 C | [DATA_NEEDED: operating temperature range] |
| 封裝 | TDSON-8 (SuperSO8) 5x6 mm | PG-TISON-8 (5.0 x 6.0 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| FET Type | — | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Configuration | — | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| 拓撲 | — | Synchronous buck half-bridge |