BSC022N04LS6ATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC022N04LS6ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| Package | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Pin Count | 8 | — |
| Operating Temperature | -55 C to +175 C (junction) | -55 C to +175 C (TJ) |
| RoHS Status | Compliant | Compliant |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Gate Drive | — | Logic-level compatible |
| MSL Level | — | 1 (per JEDEC J-STD-020) |