BSC030N03MSGATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC030N03MSGATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC030N03MSGATMA1

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΞ© OptiMOS | Infineon

BSC030N03MSGATMA1 βœ“ Active
Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC030N03MSGATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3M β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 3
Drain-Source Voltage (VDS) 30 V 75 V
Continuous Drain Current (ID) at Ta 21 A 19 A
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Drain-Source On-Resistance (RDS(on)) 3.0 mΞ© (typical at VGS=10V) β€”
Gate-Source Voltage (VGS) max Β±20 V +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc=25Β°C 69 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Package PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Drive Voltage (Min/Max RDS(on)) 4.5V / 10V β€”
Status Active β€”
Part Number β€” BSC042NE7NS3GATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W
Operating Temperature Range β€” -55C to +150C
MSL Level β€” 1

Datasheets & Resources

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