BSC030N03MSGATMA1 vs BSC042NE7NS3GATMA1 比較
詳細並排比較 BSC030N03MSGATMA1 由 Infineon 與 BSC042NE7NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC030N03MSGATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3M | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 30 V | 75 V |
| Continuous Drain Current (ID) at Ta | 21 A | 19 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (typical at VGS=10V) | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc=25°C | 69 W | — |
| 工作接面溫度 | -55°C to +150°C | — |
| 封裝 | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V | — |
| Status | Active | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| 工作溫度範圍 | — | -55C to +150C |
| MSL 等級 | — | 1 |