BSC030N03MSGATMA1 vs BSC042NE7NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC030N03MSGATMA1 disebabkan oleh Infineon dan BSC042NE7NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC030N03MSGATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3M | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 30 V | 75 V |
| Continuous Drain Current (ID) at Ta | 21 A | 19 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (typical at VGS=10V) | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc=25°C | 69 W | — |
| Suhu Hubungan Operasi | -55°C to +150°C | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V | — |
| Status | Active | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Aras MSL | — | 1 |