BSC035N04LSGATMA1 vs BSC0993NDATMA1 Comparison

Detailed side-by-side comparison of BSC035N04LSGATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active
Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC035N04LSGATMA1 BSC0993NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
RDS(on) Max at VGS=10V 3.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) β€”
Power Dissipation (Pd) at Ta=25Β°C 2.5 W β€”
Power Dissipation (Pd) at Tc=25Β°C 69 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Mounting Type Surface Mount Surface Mount
Package PG-TDSON-8-1 (8-pin, exposed drain pad) PG-TISON-8
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Product Series β€” OptiMOS 5 30V
Configuration β€” Dual N-Channel (Array)
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Id) @ Ta β€” 17 A
Technology β€” OptiMOS 5 trench MOSFET
Channel Mode β€” Enhancement
Operating Temperature Range β€” -55C to +150C (junction)
ESD Protection β€” Yes (integrated)
MSL Level β€” [DATA_NEEDED: MSL level]
Rds(on) max @ Vgs=10V β€” [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]

Datasheets & Resources

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