BSC035N04LSGATMA1 vs BSC0993NDATMA1 Comparison
Detailed side-by-side comparison of BSC035N04LSGATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC035N04LSGATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| Operating Junction Temperature | -55°C to +150°C | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TISON-8 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Technology | — | OptiMOS 5 trench MOSFET |
| Channel Mode | — | Enhancement |
| Operating Temperature Range | — | -55C to +150C (junction) |
| ESD Protection | — | Yes (integrated) |
| MSL Level | — | [DATA_NEEDED: MSL level] |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |