BSC0501NSIATMA1 vs BSO220N03MDGXUMA1 Perbandingan

Perbandingan bersamaan detil BSC0501NSIATMA1 dari Infineon dan BSO220N03MDGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC0501NSIATMA1 BSO220N03MDGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-6 (SuperSO8) PG-DSO-8 (SO-8 with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Status RoHS Compliant Compliant
Avalanche Rated Yes Yes
Technology Trench-gate OptiMOS 5 OptiMOS™ 3M (Trench MOSFET)
Series — OptiMOS™ 3M
Configuration — Dual N-Channel (2N-CH), independent
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) — 7.7 A
On-State Resistance (R_DS(on)) — 22 mΩ max @ V_GS=10V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min/max]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G nC]
Power Dissipation (P_D) — 1.4 W
Rentang Suhu Kerja — -55C to +150C (junction)

Spek dan Sumber

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