BSC072N08NS5ATMA1 vs IPT015N10N5ATMA1 Comparison

Detailed side-by-side comparison of BSC072N08NS5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC072N08NS5ATMA1 IPT015N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 OptiMOS™ 5
Drain-Source Voltage (VDS) Max 80 V 100 V
Continuous Drain Current (ID) at Tc 74 A —
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-HSOF-8-1 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: full min/max operating Tj] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg at VGS=10V]
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Part Number — IPT015N10N5ATMA1
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Configuration — Single
Operating Temperature — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

Datasheets & Resources

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