BSC072N08NS5ATMA1 vs IPT015N10N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC072N08NS5ATMA1 disebabkan oleh Infineon dan IPT015N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC072N08NS5ATMA1 IPT015N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 OptiMOS™ 5
Drain-Source Voltage (VDS) Max 80 V 100 V
Continuous Drain Current (ID) at Tc 74 A —
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-HSOF-8-1 (TOLL)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: full min/max operating Tj] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg at VGS=10V]
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Part Number — IPT015N10N5ATMA1
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Configuration — Single
Suhu Operasi — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

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