BSC072N08NS5ATMA1 vs IPT015N10N5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC072N08NS5ATMA1 sa pamamagitan ng Infineon at IPT015N10N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 ✓ NakahandaInfineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC072N08NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) Max | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc | 74 A | — |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-HSOF-8-1 (TOLL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: full min/max operating Tj] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | [DATA_NEEDED: Qg at VGS=10V] |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) | — |
| Standard Pack Quantity | 5000 | — |
| Part Number | — | IPT015N10N5ATMA1 |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| Configuration | — | Single |
| Temperature na Operasyon | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |