BSC077N12NS3GATMA1 vs IPD60R385CPATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and IPD60R385CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ Active
Specification Comparison
| Parameter | BSC077N12NS3GATMA1 | IPD60R385CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 27 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Operating Junction Temperature | -55C to +150C | -55 °C to +150 °C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 3 (Gate, Drain, Source; tab = Drain) |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Series | — | CoolMOS™ CP (5th generation) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Package / Case | — | PG-TO252-3 (DPAK) |