IPD60R385CPATMA1 - 600V 385mΩ CoolMOS™ CP MOSFET | Infineon
MPN: IPD60R385CPATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.83 | $8.30 |
| 100 | $0.71 | $71.00 |
| 500 | $0.59 | $295.00 |
| 1,000 | $0.48 | $480.00 |
| 3,000 | $0.42 | $1,260.00 |
Drop-in alternatives for IPD60R385CPATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPD60R385CPATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CP (5th generation) |
| FET Type | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 600 V |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | 9 A |
| Pulsed Drain Current (IDM) | 27 A |
| Power Dissipation (PD) at TC=25°C | 83 W |
| Gate Charge (Qg) | 18 nC (typ) |
| Operating Junction Temperature | -55 °C to +150 °C |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source; tab = Drain) |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
IPD60R385CPATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (VGS threshold typically 3-4 V) |
| Pin 2 | Source — Source terminal (signal and power return) |
| Pin 3 | Source — Source terminal (second source pin on DPAK) |
| Pin Tab | Drain — Drain terminal (electrically tied to the metal tab; also serves as thermal pad) |
Safe Operating Area (DC, TC = 25 °C)
Typical Applications
IPD60R385CPATMA1 is suitable for 6 applications: CCM Power Factor Correction (PFC) Stage, ATX/PC Main Power Supply (12V/5V/3.3V Rails), Notebook Adapter / Laptop Charger SMPS, LCD / PDP Television Main Power Supply, Industrial 600V-Class SMPS / Welding Inverter Front-End, Auxiliary / Standby Power Supply for Server & Telecom.
CCM Power Factor Correction (PFC) Stage
The IPD60R385CPATMA1 fits the CCM PFC boost stage in 200 W-500 W PC silver-box and adapter SMPS designs because its 600 V V(BR)DSS handles universal-mains rectified input and the 385 mΩ RDS(on) keeps conduction loss moderate at full load. CoolMOS™ CP's low Qrr eliminates the need for an external anti-parallel diode in the boost switch position. Placed between the bridge rectifier and the PFC inductor, it switches at 65-100 kHz with a 10 Ω-47 Ω gate resistor. Trade-off: the 385 mΩ RDS(on) yields slightly higher conduction loss than the 280 mΩ P7 variant, but the CP family is widely second-sourced and well-characterized for CCM PFC reference designs.
Recommended
ATX/PC Main Power Supply (12V/5V/3.3V Rails)
The IPD60R385CPATMA1 is well-matched to the primary-side hard-switching FET in an ATX forward or half-bridge topology where 600 V breakdown is required. The 385 mΩ RDS(on) balances switching and conduction loss for 250-400 W continuous output. Driving with a standard PFC + PWM combo controller, the MOSFET operates at 100-150 kHz with adequate thermal headroom on a DPAK copper pour of ~1 square inch. The low Qrr characteristic of the CP family reduces body-diode-related losses in half-bridge dead-time intervals. Designers should verify avalanche energy during abnormal output short conditions against the datasheet's single-pulse avalanche rating.
Recommended
Notebook Adapter / Laptop Charger SMPS
The IPD60R385CPATMA1 is suitable as the primary switch in 65 W-150 W universal-input notebook adapters where compactness and efficiency are paramount. The DPAK footprint plus the CoolMOS™ CP family's low switching loss supports adapters operating at 100-200 kHz with high power density. It is paired with a current-mode PWM controller that performs both PFC and main conversion. Compared with planar 600V MOSFETs of the same era, the CP technology reduces switching loss by ~50%, allowing either smaller magnetics or cooler operation. Thermal design should keep junction temperature below 125 °C at 40 °C ambient for typical 90 W adapters.
Recommended
LCD / PDP Television Main Power Supply
The IPD60R385CPATMA1 is used in the 200 W-400 W main power supply of LCD and PDP televisions, where the PFC + LLC or PFC + half-bridge topology dominates. Its 600 V rating accommodates 230 V AC rectified input, and the 385 mΩ RDS(on) keeps total loss budget acceptable at full panel backlight load. The intrinsic fast body diode of CoolMOS™ CP simplifies the LLC resonant half-bridge where the body diode conducts during dead-time. Designers can use the same part across 32-inch to 55-inch panel main PSUs by adjusting transformer turns ratios, since the switch's SOA envelope supports the broader power range required.
Recommended
Industrial 600V-Class SMPS / Welding Inverter Front-End
Industrial SMPS and welding-inverter front-end converters up to 600 V rectified input can use the IPD60R385CPATMA1 as the primary switch, where its 9 A continuous current rating and 83 W power dissipation give sufficient thermal margin in well-heatsinked chassis. The CP technology's rugged avalanche capability supports the repetitive stress of welding inverter topologies. Although the part is not automotive-qualified (AEC-Q101), industrial-environment designs with proper surge protection are well within its envelope. Use a TVS diode across the drain-source for additional protection against inductive load transients.
Recommended
Auxiliary / Standby Power Supply for Server & Telecom
The IPD60R385CPATMA1 is suitable for high-voltage auxiliary and standby supplies in server, telecom, and industrial rack systems that derive from -48 V DC bus with a DC-DC front-end or universal AC mains. The 600 V rating supports rectified 230 V AC input, and the 385 mΩ RDS(on) yields acceptable loss at the low standby currents typically required (5-20 W output). The CoolMOS™ CP low-Qrr characteristic keeps EMI predictable in DCM operation, simplifying CE/UL compliance. DPAK packaging is preferable over TO-220 in 1U-height rack PSUs where z-height is constrained.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R385CPATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R380P6ATMA1 | IPD60R460CEATMA1 | IPD60R280P7SAUMA1 | STD15N60M2-EP | BSC077N12NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same | PG-TDSON-8 (OptiMOS) |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 600 V | 600 V | 600 V | 600 V | 120 V (lower-voltage family) |
| RDS(on) at VGS=10V | 385 mΩ | 380 mΩ | 460 mΩ | 280 mΩ | 270 mΩ | 7.7 mΩ (120V OptiMOS) |
| Continuous Drain Current (ID) | 9 A | 10 A | 8 A | 12 A | 15 A | 62 A (120V part) |
| Generation / Family | CoolMOS™ CP (5th gen) | CoolMOS™ P6 (6th gen) | CoolMOS™ CE | CoolMOS™ P7 (7th gen) | MDmesh™ M2 (ST) | OptiMOS™ 5 (120V) |
| Power Dissipation (PD) | 83 W | 88 W | 78 W | 95 W | 110 W | 83 W |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- 5th-generation CoolMOS™ CP technology with ultra-low Qrr (vs STD15N60M2-EP)
- Pin-compatible upgrade path to newer CoolMOS™ generations (vs IPD60R460CEATMA1)
- Higher continuous current vs CE family at same voltage class (vs IPD60R460CEATMA1)
Design Notes
Estimated: at 600 V rectified mains input and 4 A average drain current with 30% duty cycle, conduction loss is roughly P = I² × RDS(on) × D = 16 × 0.385 × 0.3 ≈ 1.85 W, and switching loss at 100 kHz adds another ~1 W. Total ~2.85 W in PG-TO252-3 (θJA ≈ 62 °C/W on a 1 sq-in DPAK copper pour) yields a junction temperature rise of ~177 °C above 25 °C ambient, exceeding the 150 °C junction limit. For reliable operation, expand the drain copper pour to 2-3 sq-in or add a small clip-on heatsink. Derate ID by 50% when TC > 100 °C.
The PG-TO252-3 (DPAK) drain tab is the primary thermal dissipation path AND the high-voltage terminal. Provide at least 30 mm² of 2-oz copper pour connected to the drain tab, with thermal vias (0.3 mm drill, 1 mm pitch) to the inner-layer copper plane. Maintain 600 V creepage and clearance per IEC 60950 / IEC 62368 between the drain copper and any low-voltage trace or secondary-side copper. The DPAK land pattern is JEDEC-standard and matches TO-252 footprint used by most 600 V super-junction MOSFETs.
Gate-drive loop inductance should be minimized: place the gate resistor and gate-drive IC as close to the gate pin as possible, and use a wide, short gate-source return trace. A gate-source resistor of 10 kΩ prevents spurious turn-on from dV/dt-induced Miller coupling. Add a 10 Ω-47 Ω gate-drive resistor to control switching speed and limit ringing. For hard-switched PFC stages, consider a ferrite bead in series with the gate resistor to damp high-frequency gate-oscillation. The switching-node (drain) copper should be compact to limit radiated EMI.
Do NOT drive the IPD60R385CPATMA1 with a gate voltage below 10 V at full load - RDS(on) is specified at VGS=10V and rises sharply below that, causing overheating. Do not exceed the V(BR)DSS of 600 V, including voltage spikes from leakage inductance in the PFC boost inductor - snubber or RCD clamp is recommended. The body diode of CoolMOS™ CP has a low Qrr but cannot carry continuous DC current - use it only for dead-time conduction in half-bridge topologies.
Compliance Information
RoHS and REACH compliant per Infineon product declaration; lead-free (Pb-free) matte-tin plating; not AEC-Q100/101 qualified (industrial/commercial use only); halogen-free status to be verified against latest material declaration; conflict-minerals declaration per Infineon CMRT
