BSC0906NSATMA1 vs BSC077N12NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0906NSATMA1 BSC077N12NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 18 A 13.4 A
Continuous Drain Current (ID) at Tc 63 A 98 A
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Package PG-TDSON-8-6 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS —
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V] —
Operating Temperature Range -55C to +150C (junction, typical) —
Pin Count 8 8
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3 (120 V)
Transistor Type — N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) — 120 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Operating Junction Temperature — -55C to +150C
MSL Level — 1
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

Datasheets & Resources

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