BSC0906NSATMA1 vs BSC077N12NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0906NSATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0906NSATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 18 A 13.4 A
Continuous Drain Current (ID) at Tc 63 A 98 A
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Kemasan PG-TDSON-8-6 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS —
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V] —
Gambaran Suhu Operasi -55C to +150C (junction, typical) —
Kiraan Pin 8 8
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3 (120 V)
Jenis Transistor — N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) — 120 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

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