BSC093N15NS5ATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC093N15NS5ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.83 $0.78
Manufacturer Infineon Technologies β€”
Technology OptiMOS 5 150V β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) Max 150 V β€”
Continuous Drain Current (ID) at TC 87 A β€”
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΞ© β€”
Power Dissipation (PD) at TC 139 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant β€”
MSL Level [DATA_NEEDED: MSL level] β€”
Halogen Free [DATA_NEEDED: halogen free status] β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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