BSC0993NDATMA1 vs BSC360N15NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC360N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC0993NDATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | β |
| Configuration | Dual N-Channel (Array) | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) @ Ta | 17 A | β |
| Package | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Channel Mode | Enhancement | β |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +150Β°C (junction) |
| ESD Protection | Yes (integrated) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Part Number | β | BSC360N15NS3GATMA1 |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Power Dissipation (PD) at Tc | β | 74 W |
| Gate Threshold Voltage (VGS th) typ | β | 3.0 V |
| Total Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg value] |
| Avalanche Energy Rated | β | Yes |