BSC0993NDATMA1 vs BSC360N15NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0993NDATMA1 sa pamamagitan ng Infineon at BSC360N15NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC0993NDATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Packhaging | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Channel Mode | Enhancement | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55°C to +150°C (junction) |
| ESD Protection | Yes (integrated) | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Part Number | — | BSC360N15NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Power Dissipation (PD) at Tc | — | 74 W |
| Gate Threshold Voltage (VGS th) typ | — | 3.0 V |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Avalanche Energy Rated | — | Yes |