BSC340N08NS3GATMA1 vs ISZ028N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC340N08NS3GATMA1 sa pamamagitan ng Infineon at ISZ028N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 ✓ NakahandaInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC340N08NS3GATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID, Tc) | 23 A | — |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | 83 W |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +175C (junction, typical) |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8 FL (FL = flat lead) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Tindminan RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |