BSC340N08NS3GATMA1 vs ISZ028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil BSC340N08NS3GATMA1 dari Infineon dan ISZ028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC340N08NS3GATMA1 ISZ028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC340N08NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench) StrongIRFET 2 (Trench MOSFET)
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID, Tc) 23 A —
Continuous Drain Current (ID, Ta) 7 A —
Pulsed Drain Current (IDM) 92 A [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) max @ VGS=10V 34 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage VGS max +/- 20 V —
Power Dissipation (Tc) 32 W 83 W
Power Dissipation (Ta) 2.5 W 3 W
Rentang Suhu Kerja -55C to +150C -55C to +175C (junction, typical)
Paket PG-TDSON-8-5 (SuperSO8 5x6) PG-TSDSON-8 FL (FL = flat lead)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 1
RoHS / Lead-Free RoHS compliant, lead-free —
Channel Type Single N-Channel —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical] —
Avalanche Rating Repetitive avalanche rated —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc — 128 A
Continuous Drain Current (ID) at Ta — 22 A
Gate Threshold Voltage (VGS(th)) — 2.35 V
On-Resistance (RDS(on)) max — 2.8 mΩ
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
Status RoHS — Compliant
Avalanche Energy Rated — Yes (single-pulse)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

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