BSP149H6327XTSA1 vs BSS316NH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP149H6327XTSA1 by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP149H6327XTSA1 BSS316NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Polarity N-Channel —
Mode of Operation Depletion Mode (normally ON) —
Drain-Source Voltage VDS 200 V —
Continuous Drain Current ID 660 mA (Ta) —
Power Dissipation PD 1.8 W (Ta) —
On-State Resistance RDS(on) 1 ohm (typ) —
Gate-Source Voltage VGS [DATA_NEEDED: max VGS rating] —
Package PG-SOT223-4 (SOT-223-4) PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +150 C (Tj) —
Technology SIPMOS OptiMOS 2 (Trench)
Channel Count 1 —
Pin Count 4 (G, D, S, tab) —
RoHS Status Compliant Compliant
Configuration Single —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Operating Junction Temperature Range — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
MSL Level — MSL1 (per JEDEC J-STD-020)
Automotive Qualification — AEC-Q101 qualified

Datasheets & Resources

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