BSP149H6327XTSA1 vs BSS316NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP149H6327XTSA1 disebabkan oleh Infineon dan BSS316NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP149H6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Mode of Operation Depletion Mode (normally ON) —
Drain-Source Voltage VDS 200 V —
Continuous Drain Current ID 660 mA (Ta) —
Power Dissipation PD 1.8 W (Ta) —
On-State Resistance RDS(on) 1 ohm (typ) —
Gate-Source Voltage VGS [DATA_NEEDED: max VGS rating] —
Kemasan PG-SOT223-4 (SOT-223-4) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 C to +150 C (Tj) —
Technology SIPMOS OptiMOS 2 (Trench)
Channel Count 1 —
Kiraan Pin 4 (G, D, S, tab) —
Status RoHS Compliant Compliant
Configuration Single —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
Aras MSL — MSL1 (per JEDEC J-STD-020)
Automotive Qualification — AEC-Q101 qualified

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga