BSP149H6327XTSA1 vs BSS316NH6327XTSA1 比較
詳細並排比較 BSP149H6327XTSA1 由 Infineon 與 BSS316NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP149H6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N-Channel | — |
| Mode of Operation | Depletion Mode (normally ON) | — |
| Drain-Source Voltage VDS | 200 V | — |
| Continuous Drain Current ID | 660 mA (Ta) | — |
| Power Dissipation PD | 1.8 W (Ta) | — |
| On-State Resistance RDS(on) | 1 ohm (typ) | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: max VGS rating] | — |
| 封裝 | PG-SOT223-4 (SOT-223-4) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +150 C (Tj) | — |
| Technology | SIPMOS | OptiMOS 2 (Trench) |
| Channel Count | 1 | — |
| 腳位數 | 4 (G, D, S, tab) | — |
| RoHS 狀態 | Compliant | Compliant |
| Configuration | Single | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| 工作接面溫度範圍 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| MSL 等級 | — | MSL1 (per JEDEC J-STD-020) |
| Automotive Qualification | — | AEC-Q101 qualified |