BSP316PH6327XTSA1 vs BSP135H6906XTSA1 Comparison
Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSP135H6906XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP316PH6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | 120 mA |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Package | PG-SOT223-4 (TO-261-4) | PG-SOT223-4 (SOT-223, 3+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C |
| Number of Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | SIPMOS (planar high-voltage) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Pin Count | — | 4 (3 leads + drain tab) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |