BSP316PH6327XTSA1 vs BSP135H6906XTSA1 Perbandingan
Perbandingan bersamaan detil BSP316PH6327XTSA1 dari Infineon dan BSP135H6906XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP316PH6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | 120 mA |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Paket | PG-SOT223-4 (TO-261-4) | PG-SOT223-4 (SOT-223, 3+tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55C to +150C |
| Jumlah Pin | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | SIPMOS (planar high-voltage) |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (unlimited) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Jumlah Pin | — | 4 (3 leads + drain tab) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |