BSP316PH6327XTSA1 vs BSP135H6906XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP316PH6327XTSA1 sa pamamagitan ng Infineon at BSP135H6906XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSP316PH6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | 120 mA |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Packhaging | PG-SOT223-4 (TO-261-4) | PG-SOT223-4 (SOT-223, 3+tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +150C |
| Bilang ng Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | SIPMOS (planar high-voltage) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (unlimited) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Bilang ng Pin | — | 4 (3 leads + drain tab) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |