BSS138LT1G vs BSS138LT1G-VB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138LT1G disebabkan oleh onsemi dan BSS138LT1G-VB disebabkan oleh VBsemi Elec. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138LT1G BSS138LT1G-VB
Merek onsemi VBsemi Elec
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
Kemasan SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS Compliant (RoHS Compliant and Pb-free per Easybom) Compliant
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Drain-Source Voltage (Vdss) — 50 V
Continuous Drain Current (Id) — 200 mA (Ta)
Power Dissipation (Pd) — 225 mW (Ta)
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage]
RDS(on) Max — [DATA_NEEDED: RDS(on)]
Drive Voltage — [DATA_NEEDED: drive voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Manufacturer — VBsemi Elec
Equivalent To — onsemi BSS138LT1G

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