BSS138LT1G vs BSS138LT1G-VB 比較

詳細並排比較 BSS138LT1G 由 onsemi 與 BSS138LT1G-VB 由 VBsemi Elec. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ 啟用中

規格比較

參數 BSS138LT1G BSS138LT1G-VB
品牌 onsemi VBsemi Elec
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
封裝 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 Compliant (RoHS Compliant and Pb-free per Easybom) Compliant
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Drain-Source Voltage (Vdss) — 50 V
Continuous Drain Current (Id) — 200 mA (Ta)
Power Dissipation (Pd) — 225 mW (Ta)
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage]
RDS(on) Max — [DATA_NEEDED: RDS(on)]
Drive Voltage — [DATA_NEEDED: drive voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Manufacturer — VBsemi Elec
Equivalent To — onsemi BSS138LT1G

資料表與資源

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