BSS308PEH6327XTSA1 vs BSS314PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS308PEH6327XTSA1 by Infineon and BSS314PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS308PEH6327XTSA1 BSS314PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.15
Manufacturer Infineon Technologies β€”
Part Family OptiMOS P (small signal / small power MOSFET) β€”
Transistor Type P-Channel Enhancement Mode MOSFET β€”
Drain-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) -2 A (Ta) β€”
RDS(on) Max 80 mΞ© at VGS = -10 V β€”
Gate-Source Voltage (VGS) Max +/-20 V β€”
Power Dissipation (PD) 500 mW (Ta) β€”
Operating Temperature Range -55 Β°C to +150 Β°C -55 C to +150 C (TJ)
Package / Case PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Qualification AEC-Q101 Automotive AEC-Q101 (Automotive)
RoHS Status Compliant Compliant
Packaging Tape & Reel (T/R) β€”
Standard Reel Quantity 3000 pcs β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical value]
FET Type β€” P-Channel
Technology β€” MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) @ TA=25C β€” -1.5 A
Power Dissipation (PD) @ TA=25C β€” 500 mW
RDS(on) max @ VGS=-10V β€” 140 mOhm
RDS(on) max @ VGS=-4.5V β€” [DATA_NEEDED: RDS(on) at -4.5V VGS]
Gate Drive Voltage (max Rds(on)) β€” -4.5 V, -10 V
Package β€” PG-SOT23-3 (SOT-23-3)
Pin Configuration β€” G-D-S (Gate, Drain, Source)
MSL Level β€” MSL1 (per JEDEC J-STD-020)

Datasheets & Resources

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