BSS87H6327FTSA1 vs BSL308CH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS87H6327FTSA1 sa pamamagitan ng Infineon at BSL308CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS87H6327FTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 260 mA (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| Packhaging | PG-SOT89-4-2 (SOT-89) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 °C to +150 °C |
| Bilang ng Pin | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Process Technology | Vertical DMOS | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes (per Infineon product family convention) |