BSS87H6327FTSA1 vs BSL308CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSL308CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
Paket PG-SOT89-4-2 (SOT-89) PG-TSOP6-6 (TSOP-6, 6 pins)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55 °C to +150 °C
Jumlah Pin 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Bebas Halogen — Yes (per Infineon product family convention)

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