BSZ036NE2LSATMA1 vs BSZ150N10LS3GATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ150N10LS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSZ150N10LS3GATMA1

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSZ150N10LS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 100 V
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C β€”
MSL Level 1 (Unlimited) [DATA_NEEDED: MSL moisture sensitivity level]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
Part Number β€” BSZ150N10LS3GATMA1
Technology / Family β€” OptiMOS 3
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc=25 Β°C) β€” 40 A
On-Resistance RDS(on) max β€” 15 mΞ©
Power Dissipation (TA=25 Β°C) β€” 2.1 W
Power Dissipation (TC=25 Β°C) β€” 63 W
Operating Temperature Range (TJ) β€” -55 Β°C to +150 Β°C
Gate Threshold VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow β€” Yes (lead-free, 260 Β°C peak reflow compatible)

Datasheets & Resources

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